Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (Note 4) Forward Transconductance The guaranteed specifications apply only for the test conditions listed.Įlectrical Characteristics (TC=25✬ unless otherwise specified) Symbol For guarantee specifications and test conditions, see the Electrical Characteristics. Note: Absolute maximum ratings indicate limits beyond which damage to the device may occur. Maximum Lead Temperature for soldering purposes,1/8” from case for 10 seconds TAITRON COMPONENTS INCORPORATED Tel: (800)-TAITRON Fax: (800)-TAITFAXĢ00V/9A POWER MOSFET (N-Channel) IRF630/IRFS630 Ordering Information OutlineĪbsolute Maximum Ratings (TC=25✬ unless otherwise specified, Note) SymbolĢ00V/9A POWER MOSFET (N-Channel) IRF630/IRFS630 Symbol
IRF630/IRFS630 are available in TO-220/TO-220F packages.ĭynamic dv/dt Rating Repetitive Avalanche Rated Fast switching capability Ease of Paralleling Simple Drive Requirements RoHS Compliance and Halogen free.These power MOSFETs are designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. IRF630/IRFS630 are N-Channel enhancement mode power MOSFETs with advanced technology.200V/9A POWER MOSFET (N-Channel) IRF630/IRFS630 200V/9A Power MOSFET (N-Channel) General Description
0 kommentar(er)
